Correlation of oxygen concentration and activated oxygen donors in silicon crystals on a microscale
- 15 February 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (4) , 274-276
- https://doi.org/10.1063/1.92304
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Precipitation and redistribution of oxygen in Czochralski-grown siliconApplied Physics Letters, 1980
- Influence of oxygen on silicon resistivityJournal of Applied Physics, 1980
- Electron mobility and free-carrier absorption in InP; determination of the compensation ratioJournal of Applied Physics, 1980
- Microdistribution of Oxygen in SiliconJournal of the Electrochemical Society, 1980
- Determination of oxygen concentration profiles in silicon crystals observed by scanning IR absorption using semiconductor laserApplied Physics Letters, 1980
- Effect of Microscopic Growth Rate on Oxygen Microsegregation and Swirl Defect Distribution in Czochralski‐Grown SiliconJournal of the Electrochemical Society, 1979
- Quantitative Determination of the Carrier Concentration Distribution in Semiconductors by Scanning IR Absorption: SiJournal of the Electrochemical Society, 1979
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958