SiO2 buried layer formation by subcritical dose oxygen ion implantation
- 26 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (21) , 1470-1472
- https://doi.org/10.1063/1.96892
Abstract
The structure of the silicon dioxide buried layer formed by oxygen ion implantation at a subcritical dose i.e., 1.3×1018 ion cm−2 at 200 keV is studied. The beneficial effect of a high annealing temperature at 1300 °C for 6 h is discussed. A method for estimation of the total amount of SiO2 precipitated in the silicon overlayer is also presented, and these results are correlated with published electrical measurements.Keywords
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