Silicon on insulator by ion implantation: A dream or a reality?
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 261-264
- https://doi.org/10.1016/0168-583x(85)90563-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Electric-field-shielding layers formed by oxygen implantation into siliconElectronics Letters, 1983
- Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO2 and Si3N4 Layers Fabricated by Oxygen and Nitrogen Implantation in SiliconJapanese Journal of Applied Physics, 1982
- Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2 Layers by Very High Dose Oxygen-Ion ImplantationJapanese Journal of Applied Physics, 1980
- Charges at a laser-recrystallized-polycrystalline-silicon/insulator interfaceIEEE Electron Device Letters, 1980
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- Epitaxial silicon layers grown on ion-implanted silicon nitride layersApplied Physics Letters, 1973