Microstructure of silicon implanted with high dose oxygen ions
- 1 June 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (11) , 1064-1066
- https://doi.org/10.1063/1.95761
Abstract
Buried implanted oxide layers have been formed by high dose implantation of oxygen ions (3×1018 ions cm−2) into 〈100〉 silicon wafers, at a constant temperature of 500 °C. The implanted layers were studied by cross‐sectional transmission electron microscopy and secondary ion mass spectroscopy. The defects at both the top Si/SiO2 and the SiO2/bulk Si interfaces are shown to be SiO2 precipitates. The precipitates are unstable and can be eliminated by heat treatment, and a homogeneous top silicon layer with a low density of dislocations can be obtained.Keywords
This publication has 18 references indexed in Scilit:
- Synthesis of silicon dioxide by ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into siliconVacuum, 1984
- Microstructural defects in laser recrystallized, graphite strip heater recrystallized and buried oxide silicon-on-insulator systems: A status reportJournal of Crystal Growth, 1983
- Multistep Repeated Annealing for CZ‐Silicon Wafers: Oxygen and Induced Defect BehaviorJournal of the Electrochemical Society, 1982
- An Investigation of the Properties of an Epitaxial Si Layer on a Substrate with a Buried SiO2 Layer Formed by Oxygen-Ion ImplantationJapanese Journal of Applied Physics, 1982
- Formation and Effects of Secondary Defects in Ion implanted SiliconMRS Proceedings, 1980
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- Diffraction Contrast from Small Voids as Observed by Electron MicroscopyPhysica Status Solidi (b), 1965
- On diffraction contrast from inclusionsPhilosophical Magazine, 1963
- Diffraction contrast from spherically symmetrical coherency strainsPhilosophical Magazine, 1963