Silicon on Insulator by High Dose Implantation
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- CMOS on buried nitride—A VLSI SOI technologyIEEE Transactions on Electron Devices, 1983
- Formation of buried insulating layers in silicon by the implantation of high doses of oxygenNuclear Instruments and Methods in Physics Research, 1983
- Defects in silicon crystals after the high temperature treatmentPhysica Status Solidi (a), 1982
- Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantationElectronics Letters, 1981
- Sample contamination caused by sputtering during ion implantationVacuum, 1979
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- A study of silicon oxides prepared by oxygen implantation into siliconJournal of Physics D: Applied Physics, 1977
- Epitaxial silicon layers grown on ion-implanted silicon nitride layersApplied Physics Letters, 1973
- The collection of ions implanted in semiconductors. II. range distributions derived from collection and sputter-etch curvesRadiation Effects, 1972
- Formation of SiO2 Films by Oxygen-Ion BombardmentJapanese Journal of Applied Physics, 1966