Sample contamination caused by sputtering during ion implantation
- 1 January 1979
- Vol. 29 (11-12) , 439-442
- https://doi.org/10.1016/s0042-207x(79)80893-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- Activation analytical investigation of contamination and cross-contamination in ion implantationJournal of Electronic Materials, 1978
- A study of silicon oxides prepared by oxygen implantation into siliconJournal of Physics D: Applied Physics, 1977
- The topography of sputtered semiconductorsRadiation Effects, 1973
- Sputtering experiments in the high energy regionNuclear Instruments and Methods, 1961
- Collection and sputtering experiments with noble gas ionsNuclear Instruments and Methods, 1961