Growth law for disk precipitates, and oxygen precipitation in silicon
- 13 January 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (2) , 115-117
- https://doi.org/10.1063/1.96969
Abstract
It is shown that the energetically optimum shape of a precipitate which generates strains in the host lattice is a disc with a thickness that increases approximately with the square root of the size (disc radius). This relationship contravenes the two common assumptions that either the thickness or the aspect ratio stays unchanged during precipitate growth. From this relationship is derived a precipitate growth law of r∝t2/3. The results of the analysis are discussed with special reference to the growth of oxygen precipitates in silicon. The change in the morphology of oxygen precipitates with temperatures is also discussed.Keywords
This publication has 26 references indexed in Scilit:
- Early stages of oxygen segregation and precipitation in siliconJournal of Applied Physics, 1984
- Precipitation of oxygen in silicon kinetics, solubility, diffusivity and particle sizePhysica B+C, 1983
- Precipitation of oxygen in silicon: Some phenomena and a nucleation modelJournal of Applied Physics, 1981
- Infrared absorption spectra of SiO2 precipitates of various shapes in silicon: calculated and experimentalJournal of Applied Physics, 1980
- Diffusion-limited growth of oxide precipitates in czochralski silisonJournal of Crystal Growth, 1980
- Effects of ambients on oxygen precipitation in siliconApplied Physics Letters, 1980
- Homogeneous nucleation of oxide precipitates in Czochralski-grown siliconApplied Physics Letters, 1980
- Precipitation of oxygen in dislocation-free siliconPhysica Status Solidi (a), 1979
- Oxygen precipitation and the generation of dislocations in siliconPhilosophical Magazine, 1976
- Theory of diffusion-limited precipitationJournal of Physics and Chemistry of Solids, 1958