Aufbau und Eigenschaften „ohmscher”︁ Kontakte an GaSb
- 1 January 1973
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 8 (9) , 1083-1092
- https://doi.org/10.1002/crat.19730080913
Abstract
No abstract availableKeywords
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- Ohmic contacts to epitaxial pGaAsSolid-State Electronics, 1971
- Contact Properties of Metal-Silicon Schottky BarriersJapanese Journal of Applied Physics, 1970
- Metallization systems for silicon integrated circuitsProceedings of the IEEE, 1969
- Fermi Level Position at Semiconductor SurfacesPhysical Review Letters, 1963