Measurement of High Voltage Stress Induced Traps Inside Thin Silicon Oxide Films

This publication has 7 references indexed in Scilit:

• The polarity, field and fluence dependence of interface trap generation in thin silicon oxide
  Solid-State Electronics, 1992
• Extrapolation of high-voltage stress measurements to low-voltage operation for thin silicon-oxide films
  IEEE Transactions on Reliability, 1991
• High-field-induced degradation in ultra-thin SiO/sub 2/ films
  IEEE Transactions on Electron Devices, 1988
• Stress voltage polarity dependence of thermally grown thin gate oxide wearout
  IEEE Transactions on Electron Devices, 1988
• Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing
  IEEE Transactions on Nuclear Science, 1986
• Determination of SiO2 trapped charge distribution by capacitance-voltage analysis of undoped polycrystalline silicon-oxide-silicon capacitors
  Applied Physics Letters, 1984
• Conduction and trapping of electrons in highly stressed ultrathin films of thermal SiO2
  Applied Physics Letters, 1977