The effect of cathode materials on reactive ion etching of silicon and silicon dioxide in a CF4 plasma
- 1 May 1978
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 7 (3) , 415-428
- https://doi.org/10.1007/bf02655646
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Dry process technology (reactive ion etching)Journal of Vacuum Science and Technology, 1976
- Computer communicationsACM SIGCOMM Computer Communication Review, 1976
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975
- Secondary-emission electron gun for high pressure molecular lasersJournal of Vacuum Science and Technology, 1975