Optical mixing in epitaxial lift-off pseudomorphic HEMTs
- 1 October 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (10) , 1171-1173
- https://doi.org/10.1109/68.466580
Abstract
In this letter, we present optical mixing in epitaxial lift-off (ELO) pseudomorphic HEMTs (PHEMTs) at difference frequencies in the microwave regime up to 22 GHz. The 3 /spl mu/m gate length AlGaAs-InGaAs PHEMT's mere lifted off their host GaAs substrates and subsequently attached to quartz slides. It was observed that the ELO devices consistently resulted in stronger signals (/spl sim/7 dB) than the non-ELO devices under frontside and backside illumination. This is attributed to improved optical coupling efficiency, a decrease in substrate leakage, and an illumination-induced back gating effect for the ELO films.Keywords
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