Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
- 11 June 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (24) , 2419-2421
- https://doi.org/10.1063/1.102896
Abstract
Epitaxial liftoff is an alternative to lattice‐mismatched heteroepitaxial growth. Multilayer AlxGa1−xAs epitaxial films are separated from their growth substrates by undercutting an AlAs release layer in HF acid (selectivity ≳108 for x≤0.4). The resulting AlxGa1−xAs films tend to bond by natural intermolecular surface forces to any smooth substrate (Van der Waals bonding). We have demonstrated GaAs thin‐film bonding by surface tension forces onto Si, glass, sapphire, LiNbO3, InP, and diamond substrates, as well as self‐bonding onto GaAs substrates. In transmission electron microscopy the substrate and thin‐film atomic lattices can be simultaneously imaged, showing only a thin (20–100 Å) amorphous layer in between.Keywords
This publication has 13 references indexed in Scilit:
- Epitaxial lift-off GaAs LEDs to Si for fabrication of opto-electronic integrated circuitsElectronics Letters, 1990
- High-speed InP/GaInAs photodiode on sapphire substrateElectronics Letters, 1989
- Characterization of thin AlGaAs/InGaAs/GaAs quantum-well structures bonded directly to SiO2/Si and glass substratesJournal of Applied Physics, 1989
- Disorder-induced buried-stripe optical waveguides in GaAs/AlGaAs MQW materialElectronics Letters, 1989
- Regrowth of GaAs quantum wells on GaAs liftoff films ‘van der Waals bonded’ to silicon substratesElectronics Letters, 1989
- MESFET lift-off from GaAs substrate to glass hostElectronics Letters, 1989
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Dislocation reduction in epitaxial GaAs on Si(100)Applied Physics Letters, 1986
- Wetting Angles and Surface Tension in the Crystallization of Thin Liquid FilmsJournal of the Electrochemical Society, 1984