Influence of exciton localization on recombination line shapes:As/GaAs quantum wells as a model
- 15 October 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (15) , 9873-9876
- https://doi.org/10.1103/physrevb.46.9873
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- The dynamical Stark effect of excitonsPublished by Springer Nature ,2007
- Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniquesJournal of Applied Physics, 1991
- Exciton localization in As/GaAs quantum wells observed by temperature-modulated photoluminescencePhysical Review B, 1991
- Exciton localization inAs-GaAs coupled quantum-well structuresPhysical Review B, 1990
- Phonon sideband of photoluminescence as a probe of exciton states in a quantum wellPhysical Review B, 1989
- Localization-dependent thermalization of excitons inquantum wellsPhysical Review B, 1989
- Exciton dynamics of GaAs-AlXGa1−XAs quantum wells by picosecond time resolved photoluminescence spectroscopySuperlattices and Microstructures, 1989
- Enhanced inelastic scattering and localization of excitons inAs/InP alloy quantum wellsPhysical Review B, 1988
- Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum-well heterostructuresPhysical Review B, 1985
- Localized and delocalized two-dimensional excitons in GaAs-AlGaAs multiple-quantum-well structuresPhysical Review B, 1984