Localization-dependent thermalization of excitons inquantum wells
- 15 February 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (5) , 3419-3422
- https://doi.org/10.1103/physrevb.39.3419
Abstract
Exciton temperatures in a series of molecular-beam-epitaxy-grown single quantum wells are derived from fits to 2-K photoluminescence spectra. The temperature of the free exciton is seen to vary directly with the degree of carrier confinement, and in wells larger than the exciton diameter unusually complete thermalization is observed. Excitonic lifetimes dependent on well width along with small interface recombination velocities explain the observations.
Keywords
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