Localization induced electron-hole transition rate enhancement in GaAs quantum wells
- 1 January 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1) , 84-86
- https://doi.org/10.1063/1.94562
Abstract
The transition rate of excitonic e‐h recombination in GaAs quantum wells is found to increase by almost one order of magnitude upon a decrease of the well width from infinity to 52 Å due to increased excitonic localization. Competing capture of free carriers by impurities is increasingly suppressed. Time delayed cathodoluminescence spectra and decay times taken at 5–300 K show this unambiguously. Transfer of carriers from 176‐Å Ga0.6Al0.4As cladding wells is found to occur ballistically in 10−13 s.Keywords
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