A simple method for predicting the forward blocking gain of gridded field effect devices with rectangular grids
- 1 July 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (7) , 735-740
- https://doi.org/10.1016/0038-1101(80)90130-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Grid depth dependence of the characteristics of vertical channel field controlled thyristorsSolid-State Electronics, 1979
- Maximum surface and bulk electric fields at breakdown for planar and beveled devicesIEEE Transactions on Electron Devices, 1978
- Optimum design of triode-like JFET's by two-dimensional computer simulationIEEE Transactions on Electron Devices, 1977
- Field-effect transistor versus analog transistor (static induction transistor)IEEE Transactions on Electron Devices, 1975
- Field distribution near the surface of beveled P-N junctions in high-voltage devicesIEEE Transactions on Electron Devices, 1973
- Gridistor development for the microwave power regionIEEE Transactions on Electron Devices, 1972
- Control of electric field at the surface of P-N junctionsIEEE Transactions on Electron Devices, 1964
- Gridistor—A new field-effect deviceProceedings of the IEEE, 1964