Reverse Current and Carrier Lifetime as a Function of Temperature in Silicon Junction Diodes
- 1 July 1956
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 27 (7) , 768-772
- https://doi.org/10.1063/1.1722480
Abstract
Earlier measurements of the reverse current and carrier lifetime in germanium have been extended to a series of silicon grown junction diodes, with measurements as a function of temperature between −190°C and 200°C. The lifetime reaches a plateau at low temperatures and can be explained in terms of the Hall‐Shockley‐Read recombination theory. The slope of logir vs 1/T, the magnitude of ir, and the slope of ir vs V suggests that charge generation from centers about 0.5 ev deep is responsible for most of the reverse current in these samples up to temperatures well above room temperature.This publication has 8 references indexed in Scilit:
- Trapping of Minority Carriers in Silicon. II.-Type SiliconPhysical Review B, 1955
- Lifetime of Electrons in-Type SiliconPhysical Review B, 1955
- Effect of Water Vapor on Grown Germanium and Silicon np Junction UnitsJournal of Applied Physics, 1955
- Reverse Current and Carrier Lifetime as a Function of Temperature in Germanium Junction DiodesJournal of Applied Physics, 1955
- Einkristalle undpn-Schichtkristalle aus SiliziumThe European Physical Journal A, 1954
- Electron Multiplication in Silicon and GermaniumPhysical Review B, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Editorial Note Regarding SemiconductorsBell System Technical Journal, 1949