Band structure of semiconductor alloys beyond the virtual crystal approximation. effect of compositional disorder on the energy gaps in GaPxAs1−x
- 1 January 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 16 (1) , 99-102
- https://doi.org/10.1016/0038-1098(75)90799-1
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Optical properties and band structure of III–V compounds and alloysJournal of Luminescence, 1973
- Effect of Disorder on the Conduction-Band Effective Mass, Valence-Band Spin-Orbit Splitting, and the Direct Band Gap in III-V AlloysPhysical Review B, 1973
- Multiphoton Ionization and Dissociation of Molecular Hydrogen at 1.06 μmPhysical Review Letters, 1972
- Band Gaps of Semiconductor AlloysPhysical Review B, 1972
- No‐phonon and phonon‐assisted exciton absorption in GaAs1 − x, Px with indirect energy gapPhysica Status Solidi (b), 1972
- A comparison of the EPM and DM methods for calculations in mixed zincblende alloysJournal of Physics C: Solid State Physics, 1971
- The composition dependence of energy bands in mixed semi- conductor systems with zincblende structuresJournal of Physics C: Solid State Physics, 1971
- Pseudopotential calculations of the band structure of GaAs, InAs and (GaIn) as alloysSolid State Communications, 1969
- Zur Elektronentheorie der Metalle. IAnnalen der Physik, 1931
- Zur Elektronentheorie der Metalle. IIAnnalen der Physik, 1931