Flux Dependence of the Ag/Si(111) Growth
- 1 August 1993
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 23 (4) , 257-262
- https://doi.org/10.1209/0295-5075/23/4/004
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Growth of Cu on Cu(100)Surface Science, 1992
- Competing processes and controlling energies at the Ag/Si(111) interfaceSurface Science, 1992
- Quantification of defects in epitaxial metal film growth: a helium diffraction investigation of the Cu/W(110) systemSurface Science, 1991
- Scaling of the (√3 × √3 )R30° domain-size distribution with coverage for Ag/Si(111)Physical Review Letters, 1991
- Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substratesPhysical Review Letters, 1990
- Low-temperature epitaxial growth of thin metal filmsPhysical Review B, 1990
- Temperature dependence of metal film growth via low‐energy electron diffraction intensity oscillations: Pt/Pd(100)Journal of Vacuum Science & Technology A, 1989
- Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 KPhysical Review Letters, 1989
- Initial Stage of Ag Condensation on Si(111)7×7Physical Review Letters, 1988
- Epitaxial growth of silver on an Si(111) 7×7 surface at room temperatureThin Solid Films, 1983