4.8 mW singlemode oxide confined top-surfaceemitting vertical-cavity laser diodes
- 9 October 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (21) , 1790-1791
- https://doi.org/10.1049/el:19971207
Abstract
The authors have optimised MBE-grown GaAs VCSELs emitting at a wavelength of 840 nm for maximum singlemode output power. Devices of 3.5 µm diameter show a record high singlemode CW output power of 4.8 mW and a butt-coupling efficiency into singlemode fibre of > 80%.Keywords
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