57% wallplug efficiency oxide-confined 850 nm wavelengthGaAs VCSELs
- 13 February 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (4) , 330-331
- https://doi.org/10.1049/el:19970193
Abstract
Vertical-cavity surface-emitting lasers with reduced effective index guiding of the optical wave show a record performance. GaAs based 850 nm emission wavelength VCSELs are fabricated using solid source MBE and carbon p-type doping. Depending on device design maximum room temperature conversion efficiencies of 57%, an operating range from –80°C up to +185°C, and threshold currents below 500 µA from –40 to +80°C have been obtained.Keywords
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