Dispersive thermal carrier generation in amorphous SeTe alloys

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Abstract
The dark decay of open circuit surface voltage on a series of capacity charged amorphous Se:Te films is analyzed. It is demonstrated that dark decay is controlled by thermal emission from discrete states deep in the mobility gap. The rate of dark decay and the shape of the dark decay function dV/dt vs t vary with alloy composition. This composition induced variation in the thermal emission process is demonstrated to exhibit experimental features analogous to those which characterize dispersive transport.