Single grain thin-film-transistor (TFT) with SOI CMOS performance formed by metal-induced-lateral-crystallization
- 22 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 293-296
- https://doi.org/10.1109/iedm.1999.824154
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effects of longitudinal grain boundaries on the performance of MILC-TFTsIEEE Electron Device Letters, 1999
- Nickel induced crystallization of amorphous silicon thin filmsJournal of Applied Physics, 1998
- Polished TFT's: surface roughness reduction and its correlation to device performance improvementIEEE Transactions on Electron Devices, 1997
- Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallizationIEEE Electron Device Letters, 1996
- Stress Effect on the Reliability of pMOS TFTs for 16 Mb SRAM: DC Stress at Room and Elevated TemperaturesJapanese Journal of Applied Physics, 1996