Contact angles in the liquid phase epitaxy of InP, GaInAs and GaInAsP
- 2 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (2) , 545-549
- https://doi.org/10.1016/0022-0248(84)90462-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Contact angles between (GaAl)As solid and solutionsJournal of Crystal Growth, 1983
- Measurement of the surface tension of gallium and indium in a hydrogen atmosphere by the sessile drop methodJournal of the Less Common Metals, 1983
- Contact Angles Between III–V Melts and Several SubstratesJournal of the Electrochemical Society, 1983
- n +-InP growth on InGaAs by liquid phase epitaxyApplied Physics Letters, 1981
- Phase diagram for LPE growth of GaInAsP layers lattice matched to InP substratesIEEE Journal of Quantum Electronics, 1981