Absolute photoemission cross sections of ultraviolet emissions produced by electron-impact dissociation of boron trichloride
- 1 May 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review A
- Vol. 41 (10) , 5594-5599
- https://doi.org/10.1103/physreva.41.5594
Abstract
We report absolute photoemission cross sections and appearance potentials for the most intense ultraviolet emissions produced by electron-impact dissociation of boron trichloride, . The emission features studied include two atomic boron emissions, the 2 D→2p P° line at 208.9 nm and the 3s S→2p P ° line at 249.8 nm, which is the strongest ultraviolet emission feature, as well as the BCl Π→X system centered at 272.4 nm, whose previously reported cross section had to be revised upward by about 20% to 3× at 40 eV. The 249.8-nm boron line was found to have the largest emission cross section with a value of 5.4× at 75 eV. All cross sections displayed a prominent double onset structure with the second onset roughly 13 eV above the first one, which is very close to the ionization energy of atomic chlorine. This indicates the presence of a strong channel producing excited-state boron or boron chloride fragments simultaneously with ground-state chlorine ions. An attempt has been made to separate this ‘‘ionic’’ channel from the ‘‘neutral’’ channel in which neutral ground-state atoms are the only by-products accompanying the formation of the excited fragments.
Keywords
This publication has 20 references indexed in Scilit:
- Nonlinear excitation and dissociation kinetics in discharges through mixtures of rare and attaching gasesJournal of Applied Physics, 1988
- Absolute photo-emission cross section of the BClA 1? ?X 1?+ system produced by dissociative electron impact on BCl3The European Physical Journal D, 1988
- Time resolved fluorescence from parity mixed rotational energy levels: Collisions vs electric field effectsThe Journal of Chemical Physics, 1985
- Infrared laser spectroscopy of BCl3 in an rf dischargeThe Journal of Chemical Physics, 1985
- Sensitive, Nonintrusive,In-SituMeasurement of Temporally and Spatially Resolved Plasma Electric FieldsPhysical Review Letters, 1984
- Plasma etch chemistry of aluminum and aluminum alloy filmsPlasma Chemistry and Plasma Processing, 1982
- Plasma-assisted etchingPlasma Chemistry and Plasma Processing, 1982
- Infrared spectrum of boron chloride (BCl)Journal of Molecular Spectroscopy, 1982
- The design of plasma etchantsPlasma Chemistry and Plasma Processing, 1981
- Plasma etching of III–V compound semiconductor materials and their oxidesJournal of Vacuum Science and Technology, 1981