Plasma-assisted etching
- 1 March 1982
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 2 (1) , 1-41
- https://doi.org/10.1007/bf00566856
Abstract
No abstract availableKeywords
This publication has 101 references indexed in Scilit:
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Anisotropic plasma etching of polysiliconJournal of Vacuum Science and Technology, 1980
- Reactive ion etching of siliconJournal of Vacuum Science and Technology, 1979
- Significance of negative ion formation in sputtering and SIMS analysisJournal of Vacuum Science and Technology, 1978
- Mass spectrometric study of plasma etchingJournal of Vacuum Science and Technology, 1978
- Fabrication of deep square wave structures with micron dimensions by reactive sputter etchingApplied Physics Letters, 1978
- Ion-surface interactions in plasma etchingJournal of Applied Physics, 1977
- Preferential SiO2Etching on Si Substrate by Plasma Reactive Sputter EtchingJapanese Journal of Applied Physics, 1977
- Plasma reactor design for the selective etching of SiO2 on SiSolid-State Electronics, 1976
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975