Isothermal vapor phase epitaxy of mercury cadmium telluride
Open Access
- 1 April 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 82 (4) , 621-627
- https://doi.org/10.1016/s0022-0248(87)80006-4
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Pressure controlled VPE growth of quaternary Hg1−x−yCdxMnyTe epitaxial layersJournal of Vacuum Science & Technology A, 1985
- Open-tube vapor transport epitaxy of Hg1−xCdxTeJournal of Electronic Materials, 1984
- Isothermal Growth of HgCdTe under Controlled Hg Vapor PressureJournal of the Electrochemical Society, 1982
- Optimization of Isothermal Growth of HgCdTe LayersJournal of the Electrochemical Society, 1982
- A Modified Approach to Isothermal Growth of Ultrahigh Quality HgCdTe for Infrared ApplicationsJournal of the Electrochemical Society, 1981
- Electrical and photoelectric properties of graded-gap epitaxial CdxHg1−xTe layersThin Solid Films, 1977
- Conductivity and Hall Coefficient of Graded-Composition Epitaxial CdxHg1−xTe LayersPhysica Status Solidi (a), 1975
- Mercury pressure over HgTe and HgCdTe in a closed isothermal systemJournal of Applied Physics, 1975
- Growth and Properties of Hg1−xCdxTe Epitaxial LayersJournal of Applied Physics, 1969
- CdTe–HgTe HeterostructuresJournal of Applied Physics, 1968