An AES-SIMS study of silicon oxidation induced by ion or electron bombardment
- 31 July 1980
- journal article
- Published by Elsevier in Applications of Surface Science
- Vol. 5 (3) , 221-242
- https://doi.org/10.1016/0378-5963(80)90063-x
Abstract
No abstract availableKeywords
This publication has 54 references indexed in Scilit:
- Comparison of xenon retention in ion implanted silicon dioxide and oxygen-doped siliconNuclear Instruments and Methods, 1978
- The use of secondary ion mass spectrometry for studies of oxygen adsorption and oxidationSurface Science, 1977
- Recoil implantation from a thin source: I. Underlying theory and numerical resultsSurface Science, 1976
- Pre-equilibrium variation of the secondary ion yieldInternational Journal of Mass Spectrometry and Ion Physics, 1975
- The mechanism of simultaneous implantation and sputtering by high energy oxygen ions during secondary ion mass spectrometry (SIMS) analysisSurface Science, 1974
- Primary oxygen ion implantation effects on depth profiles by secondary ion emission mass spectrometryApplied Physics Letters, 1973
- Transmission sputtering and recoil implantation from thin metal films under ion bombardmentNuclear Instruments and Methods, 1972
- Progress in analytic methods for the ion microprobe mass analyzerInternational Journal of Mass Spectrometry and Ion Physics, 1969
- The theory of recoil implantationRadiation Effects, 1969
- Notizen: Die positive Sekundärionenemission von sauerstoffbedeckten MetallenZeitschrift für Naturforschung A, 1967