The mechanism of simultaneous implantation and sputtering by high energy oxygen ions during secondary ion mass spectrometry (SIMS) analysis
- 31 July 1974
- journal article
- other
- Published by Elsevier in Surface Science
- Vol. 44 (1) , 247-252
- https://doi.org/10.1016/0039-6028(74)90105-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Abstract: Surface, in-depth, and quantitative analysis by secondary ion mass spectrometry (SIMS)Journal of Vacuum Science and Technology, 1974
- Primary oxygen ion implantation effects on depth profiles by secondary ion emission mass spectrometryApplied Physics Letters, 1973
- Secondary ion emission for surface and in-depth analysis of tantalum thin filmsAnalytical Chemistry, 1973
- Analyses de couches minces de silice par emission ionique secondaireMaterials Research Bulletin, 1971