Reduced Lorentzian linewidth for monolithic widely tunable C-band lasers utilising InGaAlAs/InP active region
- 1 May 2011
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In this paper we report a reduction of Lorentzian linewidth for a C-band monolithic tunable digital supermode (DS) distributed Bragg reflector (DBR) laser, A prototype device containing a InGaAlAs/InP aluminium quaternary [Al(Q)] active region is compared alongside a device containing a traditionally used InGaAsP/InP phosphorus quaternary [P(Q)] active region. The DBR tuning regions and section dimensions for both devices are identical.Keywords
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