Distinction between Midgap Levels in LEC n-GaAs Determined by DLTS and Optical Absorption at 1.1 µm

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Abstract
Detailed comparison has been made of the EL2 concentration determined by DLTS and the optical absorption coefficient at 1.1 µm in LEC n-GaAs. Contrary to Martin's result, the EL2 concentration is not linearly proportional to the absorption coefficient either across wafers or between ingots grown from different melt compositions. Present results indicate that EL2 is not identical to the optically observed midgap level which has a close correlation with EPD distribution.