Deep photoluminescence band related to oxygen in gallium arsenide
- 1 November 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (9) , 863-865
- https://doi.org/10.1063/1.93678
Abstract
Temperature-dependent photoluminescence and photoluminescence excitation spectroscopy have been used to measure the 0.63-eV luminescence band present in O-doped semi-insulating GaAs. It is shown that the 0.63-eV band is related to the presence of O. The center responsible for the band forms a deep level similar to the main deep donor EL2. However, spark source mass spectrometry indicates that incorporation of O into GaAs is difficult.Keywords
This publication has 12 references indexed in Scilit:
- Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donorsApplied Physics Letters, 1982
- Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAsApplied Physics Letters, 1982
- Undoped semi-insulating LEC GaAs: a model and a mechanismElectronics Letters, 1981
- A luminescence band associated with the main electron trap in bulk gallium arsenideApplied Physics Letters, 1981
- A model for the ∼ 1.10eV emission band in InPSolid State Communications, 1980
- Effect of oxygen in photoluminescence from chromium-doped semi-insulating GaAsSolid State Communications, 1979
- Direct evidence for the nonassignment to oxygen of the main electron trap in GaAsJournal of Applied Physics, 1979
- Concentrations of carbon and oxygen in indium phosphide and gallium arsenide crystals grown by the lec techniqueJournal of Electronic Materials, 1976
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Preparation and characterization of high resistivity GaAsJournal of Physics and Chemistry of Solids, 1962