Charge trapping effects in amorphous silicon/silicon nitride thin film transistors
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 903-906
- https://doi.org/10.1016/0022-3093(87)90217-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopyJournal of Applied Physics, 1987
- Space-charge depletion studies of deep states in glassy semiconductorsJournal of Applied Physics, 1987
- Instability mechanism in hydrogenated amorphous silicon thin-film transistorsApplied Physics Letters, 1987
- Fast and slow states at the interface of amorphous silicon and silicon nitrideApplied Physics Letters, 1986
- Metastable Defects in Amorphous-Silicon Thin-Film TransistorsPhysical Review Letters, 1986
- Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1983
- Materials limitations of amorphous-Si:H transistorsIEEE Transactions on Electron Devices, 1983