Determination of surface state density in tunnel MOS devices from current-voltage characteristic
- 31 July 1974
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (7) , 763-765
- https://doi.org/10.1016/0038-1101(74)90103-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The effect of an interfacial layer on minority carrier injection in forward-biased silicon Schottky diodesSolid-State Electronics, 1973
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Tunneling in metal-oxide-silicon structuresSolid-State Electronics, 1967
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966