Approaching the limits of high resolution depth profiling
- 1 June 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 70-71, 9-19
- https://doi.org/10.1016/0169-4332(93)90389-s
Abstract
No abstract availableThis publication has 61 references indexed in Scilit:
- Phase transition of the Si(111)–Au surface from √3 ×√3 to 5×1 structure studied by means of the low-energy electron diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy techniquesJournal of Vacuum Science & Technology A, 1992
- Cascade mixing limitations in sputter profilingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Compositional depth profiling by sputteringProgress in Surface Science, 1991
- High resolution compositional depth profilingJournal of Vacuum Science & Technology A, 1991
- Theoretical and experimental studies of the broadening of dilute delta‐doped Si spikes in GaAs during SIMS depth profilingSurface and Interface Analysis, 1990
- An altered layer model for sputter‐profilingSurface and Interface Analysis, 1989
- A model for atomic mixing and preferential sputtering effects in SIMS depth profilingJournal of Vacuum Science & Technology A, 1984
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- Deconvolution method for composition profiling by Auger sputtering techniqueSurface Science, 1976
- Evaluation of concentration-depth profiles by sputtering in SIMS and AESApplied Physics A, 1976