Recystallization characteristics of polycrystalline silicon films amorphized by germanium ion implantation
- 28 February 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (2) , 383-387
- https://doi.org/10.1016/0038-1101(94)00112-s
Abstract
No abstract availableKeywords
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