Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs
Open Access
- 10 November 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (19) , 2779-2781
- https://doi.org/10.1063/1.120131
Abstract
We investigate the relaxation dynamics of photogenerated carriers in low-temperature grown GaAs by femtosecond pump-probe measurements. The carrier dynamics in the vicinity of the band edge is disentangled in a two-color technique. The filling of shallow bound states close beneath the band edge is resolved. A temporal delay in the occupation of these states as well as a large optical nonlinearity points towards microscopic potential fluctuations forming these states.Keywords
This publication has 13 references indexed in Scilit:
- Application of liftoff low-temperature-grown GaAs on transparent substrates for THz signal generationApplied Physics Letters, 1996
- Studies of the temporal and spectral shape of terahertz pulses generated from photoconducting switchesApplied Physics Letters, 1996
- Photomixing up to 3.8 THz in low-temperature-grown GaAsApplied Physics Letters, 1995
- Carrier lifetime versus anneal in low temperature growth GaAsApplied Physics Letters, 1993
- Enhanced electro-optic properties of low-temperature-growth GaAs and AlGaAsApplied Physics Letters, 1993
- Femtosecond carrier kinetics in low-temperature-grown GaAsApplied Physics Letters, 1992
- Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1991
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like bandPhysical Review B, 1990
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988