Enhanced electro-optic properties of low-temperature-growth GaAs and AlGaAs

This publication has 21 references indexed in Scilit:

• Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
  IEEE Electron Device Letters, 1990
• Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
  Applied Physics Letters, 1990
• Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy
  Applied Physics Letters, 1990
• Non-linear population processes of Er3+ laser levels in chromium-doped garnet crystals
  Optical and Quantum Electronics, 1990
• Anomalies in MODFET's with a low-temperature buffer
  IEEE Transactions on Electron Devices, 1990
• Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
  Journal of Vacuum Science & Technology B, 1989
• Effect of a GaAs buffer layer grown at low substrate temperatures on a high-electron-mobility modulation-doped two-dimensional electron gas
  Applied Physics Letters, 1989
• New MBE buffer used to eliminate backgating in GaAs MESFETs
  IEEE Electron Device Letters, 1988
• Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
  Physical Review Letters, 1984
• Electroabsorption by Stark effect on room-temperature excitons in GaAs/GaAlAs multiple quantum well structures
  Applied Physics Letters, 1983