Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
- 1 December 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (12) , 561-563
- https://doi.org/10.1109/55.63040
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFETIEEE Transactions on Electron Devices, 1989
- Drain avalanche breakdown in gallium arsenide MESFET'sIEEE Transactions on Electron Devices, 1988
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Reverse breakdown in GaAs MESFET'sIEEE Transactions on Electron Devices, 1986
- The role of the device surface in the high voltage behaviour of the GaAs MESFETSolid-State Electronics, 1986
- Power-limiting breakdown effects in GaAs MESFET'sIEEE Transactions on Electron Devices, 1981
- Control of gate—Drain avalanche in GaAs MESFET'sIEEE Transactions on Electron Devices, 1980