Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFET
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (10) , 2236-2242
- https://doi.org/10.1109/16.40905
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- V-band monolithic power MESFET amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A double-heterojunction doped-channel pseudomorphic power HEMT with a power density of 0.85 W/mm at 55 GHzIEEE Electron Device Letters, 1988
- A self-aligned gate lightly doped drain (Al, Ga)As/GaAs MODFETIEEE Electron Device Letters, 1988
- Millimeter-wave GaAs power FET with a pulse-doped InGaAs channelIEEE Electron Device Letters, 1988
- An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channelIEEE Electron Device Letters, 1987
- Studies on an In0.53Ga0.47As/In0.52Al0.48As single-quantum-well quasi-MISFETIEEE Transactions on Electron Devices, 1987
- Theoretical analysis of the layer design of inverted single-channel heterostructure transistorsIEEE Transactions on Electron Devices, 1987
- GaAs/AlGaAs heterojunction MISFET's having 1-W/mm power density at 18.5 GHzIEEE Electron Device Letters, 1986
- Submicrometer insulated-gate inverted-structure HEMT for high-speed large-logic-swing DCFL gateIEEE Transactions on Electron Devices, 1986
- Theoretical analysis of the DC avalanche breakdown in GaAs MESFET'sIEEE Transactions on Electron Devices, 1983