A double-heterojunction doped-channel pseudomorphic power HEMT with a power density of 0.85 W/mm at 55 GHz

1 August 1988

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 9 (8) , 397-398
https://doi.org/10.1109/55.756

Abstract

The authors report the DC characteristics and RF performances of a 50*0.2- mu m/sup 2/ AlGaAs/InGaAs/GaAs pseudomorphic HEMT with a doped InGaAs channel. A transconductance as high as 760 mS/mm and a maximum current density of 800 mA/mm leads to a power density of 0.85 W/mm with 3.3-dB gain and 22.1% power-added efficiency at 55 GHz.

Keywords

This publication has 4 references indexed in Scilit:

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