Electroabsorption by Stark effect on room-temperature excitons in GaAs/GaAlAs multiple quantum well structures

15 May 1983

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 42 (10) , 864-866
https://doi.org/10.1063/1.93794

Abstract

We report the first observation of electroabsorption in GaAs/GaAlAs multiple quantum well structures. We have been able to induce Stark shifts for room-temperature exciton resonances of ∼10 meV for applied field ∼1.6×104 V/cm in a sample with 96-Å GaAs layers, giving large changes in optical absorption (e.g., a factor of 5 or ∼4×103 cm−1 increase). This should permit optical modulators with micron path lengths and potentially very fast operation.

Keywords

This publication has 5 references indexed in Scilit:

Large room-temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures
Applied Physics Letters, 1982
Observation of the excited level of excitons in GaAs quantum wells
Physical Review B, 1981
Electroabsorption in GaInAsP
Applied Physics Letters, 1979
Electroabsorption in GaAs and its application to waveguide detectors and modulators
Applied Physics Letters, 1976
Quantum States of Confined Carriers in Very Thin ${Al}_{x} {Ga}_{1 - x} As$ -GaAs- ${Al}_{x} {Ga}_{1 - x} As$ Heterostructures
Physical Review Letters, 1974