Uniformity characterization of an RTP system
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1) , 612-617
- https://doi.org/10.1016/0168-583x(87)90921-9
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in siliconApplied Physics Letters, 1985
- Shallow junctions by high-dose As implants in Si: experiments and modelingJournal of Applied Physics, 1980