Ka-band GaAs HBT PIN diode switches and phase shifters
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 183-186
- https://doi.org/10.1109/mcs.1994.332108
Abstract
In this paper, we present results on millimeter-wave PIN diode switch arms and phase shifters fabricated in our HBT process line. The PIN diode is formed by the base-collector junction of the HBT and is therefore completely compatible with our conventional HBT process. A SPST switch arm exhibited 0.7 dB insertion loss and 21 dB isolation at 35 GHz. A high power version of this switch was capable of handling 29.5 dBm input power with less than 1 dB insertion loss at 17 V reverse bias. Low-pass/high-pass phase shifter bits with relative phase shifts of 45, 90, and 180/spl plusmn/10 degrees up to 36 GHz have also been demonstrated using HBT PIN diodes as switching elements. To our knowledge, this is the first demonstration of HBT PIN diode circuits at Ka-band. A detailed discussion of the circuit designs and measurements are given in the paper.<>Keywords
This publication has 6 references indexed in Scilit:
- A GaAs monolithic pin SPDT switch for 2-18 GHz applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A monolithic high power Ka-band PIN switchPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- GaAs HBT PIN diode attenuators and switchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 35 GHz pulsed HBT MMIC amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 100 MHz to 20 GHz monolithic single-pole, two-, three-, and four-throw GaAs PIN diode switchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low power consumption InAlAs-InGaAs-InP HBT SPDT PIN diode X-band switchIEEE Microwave and Guided Wave Letters, 1993