Electron mobility and minority-carrier lifetime of n-InP single crystals grown by liquid-encapsulated Czochralski method
- 1 October 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (10) , 6429-6431
- https://doi.org/10.1063/1.328591
Abstract
Correlations between electron mobility, minority-carrier lifetime, impurity concentration, and dislocation density have been studied in LEC (liquid-encapsulated Czochralski)-grown InP single crystals. Mobilities approaching 30 000 cm2/V s at 77 K, which correspond to compensation ratios of 0.2–0.4, have been obtained. Hole lifetimes as high as 3 μs have been obtained in dislocation-free single crystals. The experimental results for lifetimes can be explained by a simple model in which dislocation and impurity are considered as recombination centers.This publication has 6 references indexed in Scilit:
- Silicon Contamination of InP Synthesized under High Phosphorus PressureJournal of the Electrochemical Society, 1981
- Growth of Dislocation-Free Undoped InP CrystalsJapanese Journal of Applied Physics, 1980
- InP Single Crystal Growth by the Synthesis, Solute Diffusion MethodJapanese Journal of Applied Physics, 1978
- Electron Mobility in Direct-Gap Polar SemiconductorsPhysical Review B, 1970
- Recombination in silicon p−π−n diodesSolid-State Electronics, 1967
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952