Carbon in molecular beam epitaxial GaAs
- 1 February 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (3) , 156-157
- https://doi.org/10.1063/1.92284
Abstract
The carbon content of GaAs grown by the molecular beam epitaxial technique has been varied by varying the UHV pumping conditions and the growth temperature. The higher carbon content is evidenced by the increased conduction band to carbon acceptor transition observed in the 3.5-K photoluminescence spectrum. The GaAs specimen with highest carbon content is found to have a considerably reduced room-temperature mobility.Keywords
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