Electron mobility in compensated GaAs and AlxGa1−xAs
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (7) , 540-542
- https://doi.org/10.1063/1.91572
Abstract
A term μCA in electron mobility proportional to T−1/2 is observed in highly compensated GaAs and AlxGa1−xAs. μCA has previously been thought to be due to space‐charge scattering. Illumination with above‐band‐gap light is found to have no effect on μCA. Thus it could not be due to scattering from space‐charge regions, which are collapsed by such illumination. μCA is found to be proportional to N−1A in nonintentionally doped specimens where C is the major shallow acceptor. For intentional compensation with Ge and Zn, no decrease in μCA is observed. μCA may be due to scattering from the local central‐cell potential of the strongly electronegative C.Keywords
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