Ion implantation in TiO2: damage production and recovery, lattice site location and electrical conductivity

This publication has 30 references indexed in Scilit:

• Lattice location and electrical conductivity in Sb-implanted rutile
  Physical Review B, 1997
• Channeling studies of Hf implanted into TiO2 single crystals: Lattice disorder and lattice location
  Materials Chemistry and Physics, 1994
• Recovery stages inUO2at low temperatures
  Physical Review Letters, 1990
• Channeling Studies of Ion-Implantation Damage in Titanium Dioxide
  MRS Proceedings, 1987
• A Monte Carlo computer program for the transport of energetic ions in amorphous targets
  Nuclear Instruments and Methods, 1980
• Comparison of the photoelectric properties of the system TiO2−x with the system TiO2−xFx
  Materials Research Bulletin, 1978
• Evidence of chemical effects due to implantation of 28 mev deuterons in rutile
  Radiation Effects, 1978
• Coulomb gap and low temperature conductivity of disordered systems
  Journal of Physics C: Solid State Physics, 1975
• Electron-Spin-Resonance Studies of ${\mathrm{Mo}}^{6+}$, ${\mathrm{Mo}}^{5+}$, ${\mathrm{Mo}}^{4+}$, and ${\mathrm{Mo}}^{3+}$ in Rutile
  Physical Review B, 1973
• ``Vacuum reduction'' of rutile
  Journal of Applied Physics, 1973