Dislocations and Selective Etch Pits in InSb
- 1 July 1958
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 29 (7) , 1025-1028
- https://doi.org/10.1063/1.1723356
Abstract
A special type of dislocation etch pit has been observed in InSb, which illustrates the polarity of the zincblende structure and the nature of dislocations therein. The dislocation direction and slip plane were found to be and {111}, respectively. Dislocations introduced by plastic bending at 450°C were observed by selective etch pits on {110} faces. The etch pits are ``arrow'' shaped and all point in the same direction regardless of bending direction. The {110} pits develop for only one of two possible types of 60° dislocation which exist in the zincblende structure. One type terminates in a row of In atoms, the other in a row of Sb atoms.This publication has 7 references indexed in Scilit:
- On the mechanical properties of indium antimonidePhilosophical Magazine, 1957
- Dislocation Arrays in GermaniumJournal of Applied Physics, 1957
- On the Plasticity of Germanium and Indium AntimonideActa Metallurgica, 1957
- The Kinetics and Mechanism of Formation of Anode Films on Single-Crystal InSbJournal of the Electrochemical Society, 1957
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956
- Dislocations in Plastically Bent Germanium CrystalsJOM, 1956
- LXXXVII. Theory of dislocations in germaniumJournal of Computers in Education, 1954