Galvanomagnetic Effects in III–V Compound Semiconductors

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Abstract
The influence of various structural characteristics in the III–V compounds on galvanomagnetic properties is discussed. Evidence for the scattering of charge carriers by polar optical modes is reviewed, and the behavior of Hall and magnetoresistance coefficients is examined in regard to the conduction band structure. Unique characteristics, imparted by light masses in certain bands, include high mobilities and large magnetoeffects associated either with transport in the band or with ionization energies of the impurity centers. The importance of avoiding inhomogeneities, either in specimen or in magnetic field, when measuring Hall coefficient or magnetoresistance in high-mobility materials is emphasized. Illustrations are given of the effects of nonuniformities in carrier concentration or in applied magnetic field on various galvanomagnetic phenomena.

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